mixers - double-balanced - chip 4 4 - 60 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc554 gaas mmic fundamental mixer, 11 - 20 ghz v02.1007 general description features functional diagram high lo to rf isolation: 46 db passive double balanced topology low conversion loss: 7 db wide if bandwidth: dc - 6 ghz robust 1,000v esd, class 1c small size: 0.83 x 1.12 x 0.1 mm typical applications the hmc554 is ideal for: ? microwave radio ? vsat ? military & space ? communications, radar & ew the hmc554 is a passive double balanced mixer that can be used as an upconverter or downconverter between 11 and 20 ghz. the miniature monolithic mixer is fabricated in a gaas mesfet process, and requires no external components or matching circu- itry. the hmc554 provides excellent lo to rf and lo to if isolation due to optimized balun structures. measurements were made with the chip mounted into in a 50 ohm test fi xture and includes the para- sitic effects of wire bond assembly. connections were made with a 1 mil wire bond with minimal length (<12 mil). electrical specifi cations, t a = +25 c, if= 100 mhz, lo= +13 dbm* parameter min. typ. max. min. typ. max. units frequency range, rf & lo 12 - 16 11 - 20 ghz frequency range, if dc - 6 dc - 6 ghz conversion loss 7 9 8 10 db noise figure (ssb) 7 9 8 10 db lo to rf isolation 40 46 38 44 db lo to if isolation 32 38 30 40 db rf to if isolation 16 25 15 25 db ip3 (input) 18 18 dbm ip2 (input) 48 45 dbm 1 db gain compression (input) 11 11 dbm *unless otherwise noted, all measurements performed as downconverter, if= 100 mhz.
mixers - double-balanced - chip 4 4 - 61 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com conversion gain vs. temperature @ lo = +13 dbm conversion gain vs. lo drive isolation @ lo = +13 dbm if bandwidth @ lo = +13 dbm return loss @ lo = +13 dbm upconverter performance conversion gain vs. lo drive -20 -15 -10 -5 0 10 11 12 13 14 15 16 17 18 19 20 21 +25c +85c -55c conversion gain (db) frequency (ghz) -20 -15 -10 -5 0 10 11 12 13 14 15 16 17 18 19 20 21 lo rf return loss (db) frequency (ghz) -20 -15 -10 -5 0 10 11 12 13 14 15 16 17 18 19 20 21 +9 dbm +11 dbm +13 dbm +15 dbm conversion gain (db) frequency (ghz) -20 -15 -10 -5 0 10 11 12 13 14 15 16 17 18 19 20 21 +9 dbm +11 dbm +13 dbm +15 dbm conversion gain (db) frequency (ghz) -20 -15 -10 -5 0 01234567 if return loss conversion gain response (db) frequency (ghz) -60 -50 -40 -30 -20 -10 0 10 11 12 13 14 15 16 17 18 19 20 21 rf/if lo/rf lo/if isolation (db) frequency (ghz) hmc554 v02.1007 gaas mmic fundamental mixer, 11 - 20 ghz
mixers - double-balanced - chip 4 4 - 62 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com input ip2 vs. temperature @ lo = +13 dbm * input ip3 vs. lo drive * input ip3 vs. temperature @ lo = +13 dbm * input ip2 vs. lo drive * * two-tone input power = -5 dbm each tone, 1 mhz spacing. input p1db vs. temperature @ lo = +13 dbm 0 5 10 15 20 25 30 10 11 12 13 14 15 16 17 18 19 20 +9 dbm +11 dbm +13 dbm +15 dbm ip3 (dbm) frequency (ghz) 10 20 30 40 50 60 10 11 12 13 14 15 16 17 18 19 20 +25c +85c -40c ip2 (dbm) frequency (ghz) 10 20 30 40 50 60 10 11 12 13 14 15 16 17 18 19 20 +9 dbm +11 dbm +13 dbm +15 dbm ip2 (dbm) frequency (ghz) 0 5 10 15 20 25 30 10 11 12 13 14 15 16 17 18 19 20 +25 c +85 c -40 c ip3 (dbm) frequency (ghz) mxn spurious outputs nlo mrf01234 0xx1925xxxx 12905155xx 281856088104 3xx97987699 4xxxx10598105 rf = 15.1 ghz @ -10 dbm lo = 15.0 ghz @ +13 dbm all values in dbc below the if output power level. 6 7 8 9 10 11 12 13 14 10 11 12 13 14 15 16 17 18 19 20 +25c +85c -40c p1db (dbm) frequency (ghz) hmc554 v02.1007 gaas mmic fundamental mixer, 11 - 20 ghz
mixers - double-balanced - chip 4 4 - 63 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com outline drawing absolute maximum ratings notes: 1. all dimensions are in inches [mm]. 2. die thickness is .004. 3. typical bond pad is .004 square. 4. bond pad spacing center to center is .006. 5. backside metallization: gold. 6. bond pad metallization: gold. 7. backside metal is ground. 8. connection not required for unlabeled bond pads. 9. this die is designed for pick-up with vacuum (edge) collet tools. to preclude the risk of permanent damage, no contact to the die surface is allowed within this rectangular area. die packaging information [1] standard alternate wp-7 (waffle pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. electrostatic sensitive device observe handling precautions rf / if input +25 dbm lo drive +25 dbm channel temperature 150 c continuous pdiss (t = 85 c) (derate 3.26 mw/c above 85 c) 212 mw thermal resistance (channel to die bottom) 306 c/w storage temperature -65 to +150 c operating temperature -55 to +85 c esd sensitivity (hbm) class 1c hmc554 v02.1007 gaas mmic fundamental mixer, 11 - 20 ghz
mixers - double-balanced - chip 4 4 - 64 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com pad number function description interface schematic 1lo this pad is dc coupled and matched to 50 ohms. 2rf this pad is dc coupled and matched to 50 ohms. 3if this pad is dc coupled. for applications not requiring oper- ation to dc, this port should be dc blocked externally using a series capacitor whose value has been chosen to pass the necessary if frequency range. for operation to dc, this pin must not source or sink more than 2 ma of current or part non-function and possible part failure will result. gnd the backside of the die must be connected to rf ground. pad descriptions assembly drawing hmc554 v02.1007 gaas mmic fundamental mixer, 11 - 20 ghz
mixers - double-balanced - chip 4 4 - 65 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin fi lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. typical die-to-substrate spacing is 0.076mm (3 mils). gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended to minimize inductance on rf, lo & if ports. handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mount ing surface should be clean and fl at. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire is recommended. thermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated o n the package or substrate. all bonds should be as short as possible <0.31 mm (12 mils). 0.102mm (0.004?) thick gaas mmic 3 mil ribbon bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic 3 mil ribbon bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab hmc554 v02.1007 gaas mmic fundamental mixer, 11 - 20 ghz
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